Skip to main content
IXYS IXTA1N200P3HV

IXYS IXTA1N200P3HV

MPNIXTA1N200P3HV
Active

MOSFET N-CH 2000V 1A TO263

$9.41Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesPolar P3™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTA1N200P3HV specifications
ParameterValue
SeriesPolar P3™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage2000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs40Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs23.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds646 pF @ 25 V