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IXYS IXTA1N120P

IXYS IXTA1N120P

MPNIXTA1N120P
Active

MOSFET N-CH 1200V 1A TO263

$6.89148Price · pay online now
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$6.89 / ea

14 in stock — maximum per order · 3–4 days lead time

$6.00 / ea from 10 pcs

PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesPolar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IXTA1N120P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1A (Tc)
Power dissipation63W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs20Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs17.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds550 pF @ 25 V