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IXYS IXTA180N10T

IXYS IXTA180N10T

MPNIXTA180N10T
Active

MOSFET N-CH 100V 180A TO263

$5.9Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesTrench
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTA180N10T specifications
ParameterValue
SeriesTrench
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation480W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs6.4mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs151 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6900 pF @ 25 V