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IXYS IXTA08N120P

IXYS IXTA08N120P

MPNIXTA08N120P
Active

MOSFET N-CH 1200V 800MA TO263

$4.14Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesPolar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTA08N120P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C800mA (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs25Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds333 pF @ 25 V