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IXYS IXFX20N120P

IXYS IXFX20N120P

MPNIXFX20N120P
Active

MOSFET N-CH 1200V 20A PLUS247-3

$27.52Ref. price · indicative, final on quote
PackagingTO-247-3 Variant
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFX20N120P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation780W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3 Variant
Vgs(th) (Max) @ id6.5V @ 1mA
Rds on (Max) @ id, vgs570mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs193 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11100 pF @ 25 V