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IXYS IXFX160N30T

IXYS IXFX160N30T

MPNIXFX160N30T
Active

MOSFET N-CH 300V 160A PLUS247-3

$19.2Ref. price · indicative, final on quote
PackagingTO-247-3 Variant
RoHSROHS3 Compliant
SeriesHiPerFET™, Trench
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFX160N30T specifications
ParameterValue
SeriesHiPerFET™, Trench
FET typeN-Channel
MountingThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation1390W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3 Variant
Vgs(th) (Max) @ id5V @ 8mA
Rds on (Max) @ id, vgs19mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs335 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds28000 pF @ 25 V