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IXYS IXFX120N65X2

IXYS IXFX120N65X2

MPNIXFX120N65X2
Active

MOSFET N-CH 650V 120A PLUS247-3

$24.86Ref. price · indicative, final on quote
PackagingTO-247-3 Variant
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X2
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFX120N65X2 specifications
ParameterValue
SeriesHiPerFET™, Ultra X2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation1250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3 Variant
Vgs(th) (Max) @ id5.5V @ 8mA
Rds on (Max) @ id, vgs24mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs225 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds15500 pF @ 25 V