IXFX100N65X2
IXYS · HiPerFET™, Ultra X2 Series
MOSFET N-CH 650V 100A PLUS247-3
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HiPerFET™, Ultra X2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 1040W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 Variant |
| Vgs(th) (Max) @ id | 5.5V @ 4mA |
| Rds on (Max) @ id, vgs | 30mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11300 pF @ 25 V |
IXFX100N65X2
[ALLOC] verified