Skip to main content
IXYS IXFT16N120P

IXYS IXFT16N120P

MPNIXFT16N120P
Active

MOSFET N-CH 1200V 16A TO268

$21.72Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFT16N120P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation660W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ id6.5V @ 1mA
Rds on (Max) @ id, vgs950mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6900 pF @ 25 V