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IXYS IXFR200N10P

IXYS IXFR200N10P

MPNIXFR200N10P
Active

MOSFET N-CH 100V 133A ISOPLUS247

$18.25Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFR200N10P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C133A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 8mA
Rds on (Max) @ id, vgs9mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs235 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7600 pF @ 25 V