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IXYS IXFP5N100PM

IXYS IXFP5N100PM

MPNIXFP5N100PM
Active

MOSFET N-CH 1000V 2.3A TO220

$7.57Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack, Isolated Tab
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFP5N100PM specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.3A (Tc)
Power dissipation42W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack, Isolated Tab
Vgs(th) (Max) @ id6V @ 250µA
Rds on (Max) @ id, vgs2.8Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs33.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1830 pF @ 25 V