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IXYS IXFP12N65X2M

IXYS IXFP12N65X2M

MPNIXFP12N65X2M
Active

MOSFET N-CH 650V 12A TO220

$4.06Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack, Isolated Tab
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X2
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFP12N65X2M specifications
ParameterValue
SeriesHiPerFET™, Ultra X2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack, Isolated Tab
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs310mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs18.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1134 pF @ 25 V