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IXYS IXFP10N80P

IXYS IXFP10N80P

MPNIXFP10N80P
Active

MOSFET N-CH 800V 10A TO220AB

$6.38Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFP10N80P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5.5V @ 2.5mA
Rds on (Max) @ id, vgs1.1Ohm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2050 pF @ 25 V