IXYS IXFN82N60Q3
MPNIXFN82N60Q3
Active
MOSFET N-CH 600V 66A SOT227B
$57.9Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesHiPerFET™, Q3 Class
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HiPerFET™, Q3 Class |
| FET type | N-Channel |
| Mounting | Chassis Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 66A (Tc) |
| Power dissipation | 960W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-227-4, miniBLOC |
| Vgs(th) (Max) @ id | 6.5V @ 8mA |
| Rds on (Max) @ id, vgs | 75mOhm @ 41A, 10V |
| Gate charge (Qg) (Max) @ vgs | 275 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 13500 pF @ 25 V |