Skip to main content
IXYS IXFN70N100X

IXYS IXFN70N100X

MPNIXFN70N100X
Active

MOSFET N-CH 1000V 56A SOT227B

$67.5Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFN70N100X specifications
ParameterValue
SeriesHiPerFET™, Ultra X
FET typeN-Channel
MountingChassis Mount
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation1200W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id6V @ 8mA
Rds on (Max) @ id, vgs89mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs350 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9150 pF @ 25 V