IXFN66N85X
IXYS · HiPerFET™, Ultra X Series
MOSFET N-CH 850V 65A SOT227B
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HiPerFET™, Ultra X |
| FET type | N-Channel |
| Mounting | Chassis Mount |
| Drain to source voltage | 850 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 65A (Tc) |
| Power dissipation | 830W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-227-4, miniBLOC |
| Vgs(th) (Max) @ id | 5.5V @ 8mA |
| Rds on (Max) @ id, vgs | 65mOhm @ 33A, 10V |
| Gate charge (Qg) (Max) @ vgs | 230 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8900 pF @ 25 V |
IXFN66N85X
[ALLOC] verified