Skip to main content
IXYS IXFN360N10T

IXYS IXFN360N10T

MPNIXFN360N10T
Active

MOSFET N-CH 100V 360A SOT-227B

$27.69Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesHiPerFET™, Trench
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFN360N10T specifications
ParameterValue
SeriesHiPerFET™, Trench
FET typeN-Channel
MountingChassis Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C360A (Tc)
Power dissipation830W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs2.6mOhm @ 180A, 10V
Gate charge (Qg) (Max) @ vgs505 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds36000 pF @ 25 V