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IXYS IXFN180N25T

IXYS IXFN180N25T

MPNIXFN180N25T
Active

MOSFET N-CH 250V 168A SOT227B

$24.67Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesHiPerFET™, Trench
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFN180N25T specifications
ParameterValue
SeriesHiPerFET™, Trench
FET typeN-Channel
MountingChassis Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C168A (Tc)
Power dissipation900W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id5V @ 8mA
Rds on (Max) @ id, vgs12.9mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs345 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds28000 pF @ 25 V