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IXYS IXFN170N30P

IXYS IXFN170N30P

MPNIXFN170N30P
Active

MOSFET N-CH 300V 138A SOT-227B

$46.84Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFN170N30P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingChassis Mount
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C138A (Tc)
Power dissipation890W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id4.5V @ 1mA
Rds on (Max) @ id, vgs18mOhm @ 85A, 10V
Gate charge (Qg) (Max) @ vgs258 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20000 pF @ 25 V