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IXYS IXFN110N60P3

IXYS IXFN110N60P3

MPNIXFN110N60P3
Active

MOSFET N-CH 600V 90A SOT227B

$39.1Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar3™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFN110N60P3 specifications
ParameterValue
SeriesHiPerFET™, Polar3™
FET typeN-Channel
MountingChassis Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation1500W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id5V @ 8mA
Rds on (Max) @ id, vgs56mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs245 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds18000 pF @ 25 V