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IXYS IXFN100N50P

IXYS IXFN100N50P

MPNIXFN100N50P
Active

MOSFET N-CH 500V 90A SOT-227B

$41.02Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFN100N50P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingChassis Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation1040W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id5V @ 8mA
Rds on (Max) @ id, vgs49mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20000 pF @ 25 V