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IXYS IXFK32N100P

IXYS IXFK32N100P

MPNIXFK32N100P
Active

MOSFET N-CH 1000V 32A TO264AA

$24.89Ref. price · indicative, final on quote
PackagingTO-264-3, TO-264AA
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFK32N100P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation960W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id6.5V @ 1mA
Rds on (Max) @ id, vgs320mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs225 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14200 pF @ 25 V