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IXYS IXFK27N80Q

IXYS IXFK27N80Q

MPNIXFK27N80Q
Active

MOSFET N-CH 800V 27A TO264AA

$30.26Ref. price · indicative, final on quote
PackagingTO-264-3, TO-264AA
RoHSROHS3 Compliant
SeriesHiPerFET™, Q Class
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFK27N80Q specifications
ParameterValue
SeriesHiPerFET™, Q Class
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C27A (Tc)
Power dissipation500W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id4.5V @ 4mA
Rds on (Max) @ id, vgs320mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7600 pF @ 25 V