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IXYS IXFK170N20T

IXYS IXFK170N20T

MPNIXFK170N20T
Active

MOSFET N-CH 200V 170A TO264AA

$14.65Ref. price · indicative, final on quote
PackagingTO-264-3, TO-264AA
RoHSROHS3 Compliant
SeriesHiPerFET™, Trench
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFK170N20T specifications
ParameterValue
SeriesHiPerFET™, Trench
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C170A (Tc)
Power dissipation1150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id5V @ 4mA
Rds on (Max) @ id, vgs11mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs265 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds19600 pF @ 25 V