Skip to main content
IXYS IXFH69N30P

IXYS IXFH69N30P

MPNIXFH69N30P
Active

MOSFET N-CH 300V 69A TO247AD

$10.99Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFH69N30P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C69A (Tc)
Power dissipation500W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 4mA
Rds on (Max) @ id, vgs49mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4960 pF @ 25 V