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IXYS IXFH60N65X2-4

IXYS IXFH60N65X2-4

MPNIXFH60N65X2-4
Active

MOSFET N-CH 650V 60A TO247-4L

$13.13Ref. price · indicative, final on quote
PackagingTO-247-4
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFH60N65X2-4 specifications
ParameterValue
SeriesHiPerFET™, Ultra X2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation780W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-4
Vgs(th) (Max) @ id5V @ 4mA
Rds on (Max) @ id, vgs52mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs108 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6300 pF @ 25 V