Skip to main content
IXYS IXFH60N65X2

IXYS IXFH60N65X2

MPNIXFH60N65X2
Active

MOSFET N-CH 650V 60A TO247

$11.36Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X2
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFH60N65X2 specifications
ParameterValue
SeriesHiPerFET™, Ultra X2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation780W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5.5V @ 4mA
Rds on (Max) @ id, vgs52mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs107 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6180 pF @ 25 V