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IXYS IXFH32N100X

IXYS IXFH32N100X

MPNIXFH32N100X
Active

MOSFET N-CH 1000V 32A TO247

$22.43Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFH32N100X specifications
ParameterValue
SeriesHiPerFET™, Ultra X
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation890W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id6V @ 4mA
Rds on (Max) @ id, vgs220mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4075 pF @ 25 V