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IXYS IXFH26N100X

IXYS IXFH26N100X

MPNIXFH26N100X
Active

MOSFET N-CH 1000V 26A TO247

$19.59Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFH26N100X specifications
ParameterValue
SeriesHiPerFET™, Ultra X
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation860W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id6V @ 4mA
Rds on (Max) @ id, vgs320mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs113 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3290 pF @ 25 V