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IXYS IXFH18N100Q3

IXYS IXFH18N100Q3

MPNIXFH18N100Q3
Active

MOSFET N-CH 1000V 18A TO247AD

$20.46Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Q3 Class
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFH18N100Q3 specifications
ParameterValue
SeriesHiPerFET™, Q3 Class
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation830W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id6.5V @ 4mA
Rds on (Max) @ id, vgs660mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4890 pF @ 25 V