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IXYS IXFB82N60P

IXYS IXFB82N60P

MPNIXFB82N60P
Active

MOSFET N-CH 600V 82A PLUS264

$30.3Ref. price · indicative, final on quote
PackagingTO-264-3, TO-264AA
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFB82N60P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C82A (Tc)
Power dissipation1250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id5V @ 8mA
Rds on (Max) @ id, vgs75mOhm @ 41A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23000 pF @ 25 V