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IXYS IXFA7N100P

IXYS IXFA7N100P

MPNIXFA7N100P
Active

MOSFET N-CH 1000V 7A TO263

$6.19Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFA7N100P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id6V @ 1mA
Rds on (Max) @ id, vgs1.9Ohm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs47 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2590 pF @ 25 V