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IXYS IXFA6N120P

IXYS IXFA6N120P

MPNIXFA6N120P
Active

MOSFET N-CH 1200V 6A TO263

$10.53Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHiPerFET™, Polar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFA6N120P specifications
ParameterValue
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs2.4Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2830 pF @ 25 V