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IXYS IXBX75N170

IXYS IXBX75N170

MPNIXBX75N170
Active

IGBT 1700V 200A 1040W PLUS247

$66.26Ref. price · indicative, final on quote
PackagingTO-247-3 Variant
RoHSROHS3 Compliant
SeriesBIMOSFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXBX75N170 specifications
ParameterValue
SeriesBIMOSFET™
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown1700 V
Current - collector (Ic)200 A
Current - collector pulsed580 A
Power - max1040 W
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Gate charge350 nC
CaseTO-247-3 Variant
Vce(on) (Max) @ vge, ic3.1V @ 15V, 75A
Reverse recovery time1.5 µs