IXBX75N170
IXYS · BIMOSFET™ Series
IGBT 1700V 200A 1040W PLUS247
[IN STOCK] In Stock: 14 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | BIMOSFET™ |
| Input type | Standard |
| Mounting | Through Hole |
| Voltage - collector emitter breakdown | 1700 V |
| Current - collector (Ic) | 200 A |
| Current - collector pulsed | 580 A |
| Power - max | 1040 W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Gate charge | 350 nC |
| Case | TO-247-3 Variant |
| Vce(on) (Max) @ vge, ic | 3.1V @ 15V, 75A |
| Reverse recovery time | 1.5 µs |
IXBX75N170
[ALLOC] verified