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IXYS IRFP260 — Discrete Semiconductors

IXYS IRFP260

MPNIRFP260
Obsolete
$5.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFP260 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C46A (Tc)
Power dissipation280W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs55mOhm @ 28A, 10V
Gate charge (Qg) (Max) @ vgs230 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3900 pF @ 25 V