Skip to main content
IXYS Integrated Circuits Division IXDN614CI — Memory (DRAM / SRAM / Flash / EEPROM)

IXYS Integrated Circuits Division IXDN614CI

MPNIXDN614CI
Active

IC GATE DRVR LOW-SIDE TO220-5

$5.97Ref. price · indicative, final on quote
PackagingTO-220-5 Formed Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXDN614CI specifications
ParameterValue
Gate typeIGBT, N-Channel, P-Channel MOSFET
Input typeNon-Inverting
Channel typeSingle
MountingThrough Hole
Voltage4.5V ~ 35V
Logic voltage - VIL, VIH0.8V, 3V
Current - peak output (Source, sink)14A, 14A
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
CaseTO-220-5 Formed Leads
Number of drivers1
Driven configurationLow-Side
Rise (Fall time)25ns, 18ns