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IXYS Integrated Circuits Division IXDI602SI — Memory (DRAM / SRAM / Flash / EEPROM)

IXYS Integrated Circuits Division IXDI602SI

MPNIXDI602SI
Active

IC GATE DRVR LOW-SIDE 8SOIC

$2.51Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width) Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXDI602SI specifications
ParameterValue
Gate typeIGBT, N-Channel, P-Channel MOSFET
Input typeInverting
Channel typeIndependent
MountingSurface Mount
Voltage4.5V ~ 35V
Logic voltage - VIL, VIH0.8V, 3V
Current - peak output (Source, sink)2A, 2A
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width) Exposed Pad
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7.5ns, 6.5ns