Skip to main content
IXYS Integrated Circuits Division IXDD609SIATR — Discrete Semiconductors

IXYS Integrated Circuits Division IXDD609SIATR

MPNIXDD609SIATR
Active

IC GATE DRVR LOW-SIDE 8SOIC

$2.03Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXDD609SIATR specifications
ParameterValue
Gate typeIGBT, N-Channel, P-Channel MOSFET
Input typeNon-Inverting
Channel typeSingle
MountingSurface Mount
Voltage4.5V ~ 35V
Logic voltage - VIL, VIH0.8V, 3V
Current - peak output (Source, sink)9A, 9A
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers1
Driven configurationLow-Side
Rise (Fall time)22ns, 15ns