Skip to main content

Infineon Technologies IRF8 Discrete Semiconductors Series

2 variants · Infineon Technologies

About the Infineon Technologies IRF8 Discrete Semiconductors Series

The Infineon Technologies IRF8 Discrete Semiconductors Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common FET type of N-Channel, mounting of Surface Mount and operating temperature high of -40°C to 150°C(TJ). Variants differ by capacitance_uf, gate charge (Qg) (Max) @ vgs and power, so you can match the exact capacitance_uf your application requires using the selection guide below. All listed Infineon Technologies IRF8 Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Capacitance_uf
0.0014 · 0.0044
Gate charge (Qg) (Max) @ vgs
14 nC @ 4.5 V · 42 nC @ 4.5 V
Power
2.2 · 2.8
Rds on (Max) @ id, vgs
2.5mOhm @ 27 A, 10 V · 7.3mOhm @ 14 A, 10 V
Switching current
14.0 · 27.0
Vgs(Th) (Max) @ id
2.35 V @ 100µA · 2.4 V @ 25µA

Shared specifications

FET type
N-Channel
Mounting
Surface Mount
Operating temperature high
-40°C to 150°C(TJ)
Package_type
Bulk
Supply voltage
30.0
Vgs
±20 V

Variant comparison

ParameterIRF8327STRPBFIRF8308MTRPBF
Capacitance_uf0.00140.0044
Gate charge (Qg) (Max) @ vgs14 nC @ 4.5 V42 nC @ 4.5 V
Power2.22.8
Rds on (Max) @ id, vgs7.3mOhm @ 14 A, 10 V2.5mOhm @ 27 A, 10 V
Switching current14.027.0
Vgs(Th) (Max) @ id2.4 V @ 25µA2.35 V @ 100µA

Request a quote on any Infineon Technologies IRF8 Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants