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Infineon Technologies BSO3 Discrete Semiconductors Series

2 variants · Infineon Technologies

About the Infineon Technologies BSO3 Discrete Semiconductors Series

The Infineon Technologies BSO3 Discrete Semiconductors Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of 8-SOIC (0.154\", 3.90mm Width), mounting of Surface Mount and operating temperature of -55°C ~ 150°C (TJ). Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and FET type, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed Infineon Technologies BSO3 Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C
7A (Tc) · 7.2A (Ta)
Drain to source voltage
30 V · 30V
FET type
2 P-Channel (Dual) · P-Channel
Gate charge (Qg) (Max) @ vgs
49nC @ 10V · 54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds
2330 pF @ 25 V · 2678pF @ 25V
Rds on (Max) @ id, vgs
21mOhm @ 8.2A, 10V · 21mOhm @ 9.1A, 10V

Shared specifications

Case
8-SOIC (0.154\", 3.90mm Width)
Mounting
Surface Mount
Operating temperature
-55°C ~ 150°C (TJ)
Package
Bulk
Vgs(th) (Max) @ id
2V @ 100µA

Variant comparison

ParameterBSO303SPHBSO303PH
Current - continuous drain (Id) @ 25°C7.2A (Ta)7A (Tc)
Drain to source voltage30 V30V
FET typeP-Channel2 P-Channel (Dual)
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V49nC @ 10V
Input capacitance (Ciss) (Max) @ vds2330 pF @ 25 V2678pF @ 25V
Rds on (Max) @ id, vgs21mOhm @ 9.1A, 10V21mOhm @ 8.2A, 10V

Request a quote on any Infineon Technologies BSO3 Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants