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Infineon Technologies SPA11N80C3XKSA2 — Discrete Semiconductors

Infineon Technologies SPA11N80C3XKSA2

MPNSPA11N80C3XKSA2
Active

MOSFET N-CH 800V 11A TO220-3

$2.8700Ref. price · indicative, final on quote
PackagingTO-220-3 Isolated Tab
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SPA11N80C3XKSA2 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Isolated Tab
Vgs(th) (Max) @ id3.9V @ 680µA
Rds on (Max) @ id, vgs450mOhm @ 7.1A, 10V
Gate charge (Qg) (Max) @ vgs85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 100 V