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Infineon Technologies CY7C2268XV18-633BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C2268XV18-633BZXC DDR II+ SRAM, 36 Mbit, 633 MHz

MPNCY7C2268XV18-633BZXC
End of Life

Infineon CY7C2268XV18-633BZXC, DDR II+ synchronous SRAM, 36 Mbit (2M×18), 633 MHz parallel interface, 1.7–1.9 V supply, 165-FBGA (13×15 mm) tray, 0°C–70°C.

$116.5000Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CY7C2268XV18-633BZXC Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage1.7V ~ 1.9V
Frequency633 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

633 MHz DDR II+ SRAM — what the clock rate means for bus timing

The CY7C2268XV18-633BZXC is a 36 Mbit DDR II+ synchronous SRAM organized 2M×18, clocked at 633 MHz over a parallel interface. The 1.7–1.9 V supply rail is narrow — the board designer must allocate a dedicated LDO or power module. The 165-FBGA (13×15 mm) footprint demands controlled-impedance routing on a multi-layer PCB. The commercial temperature grade (0°C to 70°C) suits indoor rack-mount or lab gear.

Package and integration note

The 165-FBGA (13×15 mm) package uses a fine-pitch ball array. The board stack-up needs at least four layers with buried vias to escape the inner rows. The tray shipment (not tape-and-reel) suits prototype and low-to-medium volume builds.

Frequently asked questions

Will CY7C2268XV18-633BZXC drop into a board designed for CY7C2268XV18-600BZXC?

Yes — the 633 MHz and 600 MHz variants share the same 165-FBGA footprint and pinout. No PCB rev is needed, though the controller must support the higher clock rate to exploit the bandwidth gain.

What is the memory organization and supply voltage of CY7C2268XV18-633BZXC?

The memory is organized 2M×18 (36 Mbit total) and operates from a 1.7–1.9 V supply rail.