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Infineon Technologies IRLZ34NSTRLPBF — Discrete Semiconductors

IRLZ34NSTRLPBF HEXFET N-Ch 55V 30A D2PAK MOSFET

MPNIRLZ34NSTRLPBF
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Infineon HEXFET® N-Channel MOSFET, IRLZ34NSTRLPBF, 55V Vdss, 30A Id, 35mOhm Rds(on), D2PAK (TO-263), Tape & Reel.

$1.6300Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRLZ34NSTRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation3.8W (Ta), 68W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 25 V

Product details

55V, 30A N-channel in D2PAK

The IRLZ34NSTRLPBF: The 35 mOhm maximum on-resistance is specified at 16 A with a 10 V gate drive, and the device is also characterized for logic-level drive at 4 V. The D2PAK (TO-263) surface-mount package suits automated assembly on power supply and motor control boards where the backside tab is soldered to a copper island for thermal management. The 68 W power dissipation at the case (Tc) versus 3.8 W at ambient (Ta) means the heatsinking on the PCB pad determines the real-world current capability.

Total gate charge is 25 nC at a 5 V gate drive, and the input capacitance measures 880 pF at 25 V drain-source. These numbers set the switching speed ceiling: a gate driver sourcing 1 A charges the gate in roughly 25 ns, but the practical edge rate also depends on the gate loop inductance and the Miller plateau duration.

Frequently asked questions

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