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Infineon Technologies IRF3205L — Discrete Semiconductors

Infineon Technologies IRF3205L

MPNIRF3205L
Obsolete
$1.6000Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF3205L Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 62A, 10V
Gate charge (Qg) (Max) @ vgs146 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3247 pF @ 25 V