650 V CoolMOS CE — TO-220 Full Pack for isolated mounting
The Infineon IPAN65R650CEXKSA1 is a 650 V N-channel CoolMOS CE power MOSFET rated for 10.1 A continuous drain current at a 25°C case temperature.
These figures keep the gate-drive power low in a 65–100 kHz switching regulator — a typical driver sourcing 0.5 A peak can charge the gate in under 50 ns.
Maximum power dissipation is 28 W at Tc = 25°C; the junction-to-case thermal path is through the back of the package, so the heatsink interface is the dominant thermal resistance.
