Infineon CoolMOS PFD7 N-Channel MOSFET, IPAN60R210PFD7SXKSA1, 650V Vdss, 16A Id, 210mOhm Rds(on) at 10V, 23nC Qg, TO-220 Full Pack, -40°C to 150°C TJ.
| Parameter | Value |
|---|---|
| Series | CoolMOS™PFD7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -40°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 240µA |
| Rds on (Max) @ id, vgs | 210mOhm @ 4.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1015 pF @ 400 V |
The IPAN60R210PFD7SXKSA1 is an Infineon CoolMOS PFD7 N-channel power MOSFET in a through-hole TO-220 Full Pack package.
The TO-220 Full Pack (PG-TO220-FP) isolates the backside tab electrically, simplifying heatsink attachment without an insulating pad — useful in high-voltage designs where the tab is at drain potential.
Input capacitance is 1015 pF at 400 V drain-source.
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