Skip to main content
Infineon Technologies IPA65R1K0CEXKSA1 — Discrete Semiconductors

Infineon Technologies IPA65R1K0CEXKSA1

MPNIPA65R1K0CEXKSA1
Active

MOSFET N-CH 650V 7.2A TO220

$1.1000Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPA65R1K0CEXKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.2A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 200µA
Rds on (Max) @ id, vgs1Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs15.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds328 pF @ 100 V