100 V N-channel in the TO-220 Full Pack
The IPA045N10N3GXKSA1 is an N-channel MOSFET from Infineon's OptiMOS series, rated for 100 V drain-to-source and 64 A continuous drain current at 25 °C case temperature. Housed in the PG-TO220-FP (full-pack) through-hole package, the backside tab is electrically isolated — no insulating pad or washer needed between the device and the heatsink, which simplifies assembly and improves thermal coupling.
Conduction and switching parametrics
Maximum on-resistance is 4.5 mOhm at 64 A with a 10 V gate drive — this sets the conduction loss floor: at full current the dissipation is I²R ≈ 18.4 W, well within the 39 W package limit at case temperature. Gate charge totals 117 nC at 10 V; for a 100 kHz switching frequency the gate-driver must supply roughly 11.7 mA average current (Qg × fsw). The 8410 pF input capacitance at 50 V Vds gives a rough Ciss figure for driver sizing. Operating junction temperature spans -55 °C to 175 °C, so the part handles the thermal margin of an industrial motor drive or an under-hood automotive module without derating at the high end.
Lifecycle and compliance
ROHS3 compliant per the supplier declaration, covering the EU RoHS exemption list through the latest update.