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Infineon Technologies IPA045N10N3GXKSA1 — Discrete Semiconductors

Infineon Technologies IPA045N10N3GXKSA1

MPNIPA045N10N3GXKSA1
Active

MOSFET N-CH 100V 64A TO220-FP

$2.9500Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPA045N10N3GXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C64A (Tc)
Power dissipation39W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 150µA
Rds on (Max) @ id, vgs4.5mOhm @ 64A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8410 pF @ 50 V