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Infineon Technologies IPA029N06NXKSA1 — Discrete Semiconductors

Infineon Technologies IPA029N06NXKSA1

MPNIPA029N06NXKSA1
Active

MOSFET N-CH 60V 84A TO220-FP

$3.1000Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPA029N06NXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C84A (Tc)
Power dissipation38W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.3V @ 75µA
Rds on (Max) @ id, vgs2.9mOhm @ 84A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5125 pF @ 30 V