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Infineon Technologies CY7C2644KV18-300BZXI — Memory (DRAM / SRAM / Flash / EEPROM)
Infineon Technologies

CY7C2644KV18-300BZXI Cypress QDR II+ SRAM, 144Mbit, 300 MHz

MPNCY7C2644KV18-300BZXI
End of Life

Cypress (Infineon) QDR II+ synchronous SRAM, CY7C2644KV18-300BZXI, 144Mbit organized 4M x 36, 300 MHz clock, 1.7–1.9 V supply, 165-ball FBGA (15x17 mm), -40°C to 85°C, tray.

$243.9200Ref. price · indicative, final on quote
CY7C2644KV18-300BZXI datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

CY7C2644KV18-300BZXI Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage1.7V ~ 1.9V
Frequency300 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 36

Product details

300 MHz QDR II+ SRAM for high-throughput buffers

The CY7C2644KV18-300BZXI is a Cypress (Infineon) QDR II+ synchronous SRAM with 144Mbit organized as 4M x 36. The 300 MHz clock rate supports double-data-rate read and write ports. Operating from a 1.7 V to 1.9 V supply, this part is rated over the industrial temperature range of -40°C to 85°C, so it can sit in outdoor cabinets or factory-floor enclosures without derating. The 165-ball FBGA (15x17 mm) package requires a multi-layer PCB with controlled impedance for the parallel bus.

Memory organization and bus width

The 4M x 36 organization provides a 36-bit wide data bus per port with independent read and write ports in QDR II+. The 144Mbit density suits moderate-depth buffers.

Frequently asked questions

Will CY7C2663KV18-450BZI drop in as a replacement?

No. The CY7C2663KV18-450BZI is organized 8M x 18 at 450 MHz, not 4M x 36 at 300 MHz. It is not a pin-compatible or functional drop-in without redesigning the memory controller interface.